Intel and Micron Team Up for Three-Bit-Per-Cell Flash

Micron and Intel are working on a three-bit-per-cell NAND flash device that is set to be produced in the fourth quarter of this year. Developed by IM Flash Technologies, Micron’s and Intel’s joint venture, the new tech will double or triple the bit-per-cell capacity that flash memory is usually capable of, which means that flash cards can be produced with a higher bit density–more memory on a smaller card. According to Micron, the 32Gb 3bpc NAND chip is 126 sq. mm. While solving some problems, higher bit density creates endurance and performance issues, so the new technology will be best applied to USB flash drives and flash cards. Sandisk is also working on three-bit NAND technology and four-bit is expected to come out next year. [via PC Mag]